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BFR193E6327HTSA1
Discrete Semiconductor Products

BFR193E6327HTSA1

Active
INFINEON

TRANS RF BJT NPN 12V 0.08A 580MW AUTOMOTIVE AEC-Q101 3-PIN SOT-23 T/R

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BFR193E6327HTSA1
Discrete Semiconductor Products

BFR193E6327HTSA1

Active
INFINEON

TRANS RF BJT NPN 12V 0.08A 580MW AUTOMOTIVE AEC-Q101 3-PIN SOT-23 T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBFR193E6327HTSA1
Current - Collector (Ic) (Max) [Max]80 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]70
Frequency - Transition8 GHz
Gain [Max]15 dBi
Gain [Min]10 dB
Mounting TypeSurface Mount
Noise Figure (dB Typ @ f) [Max]1.6 dB
Noise Figure (dB Typ @ f) [Min]1 dB
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]580 mW
Supplier Device PackagePG-SOT23
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max) [Max]12 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 13199$ 0.31
MouserN/A 1$ 0.19
10$ 0.11
100$ 0.09
500$ 0.08
1000$ 0.08
3000$ 0.07
6000$ 0.07
9000$ 0.07
24000$ 0.06
NewarkEach (Supplied on Full Reel) 15000$ 0.07
30000$ 0.07
60000$ 0.07
90000$ 0.07

Description

General part information

BFR193 Series

NPN Silicon RF Transistor

Documents

Technical documentation and resources