
HMC619-SX
ObsoleteIC RF AMP GP 0HZ-10GHZ DIE 1=2PC
Deep-Dive with AI
Search across all available documentation for this part.

HMC619-SX
ObsoleteIC RF AMP GP 0HZ-10GHZ DIE 1=2PC
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | HMC619-SX |
|---|---|
| Current - Supply | 300 mA |
| Frequency [Max] | 10 GHz |
| Frequency [Min] | 0 Hz |
| Gain | 12 dBi |
| Mounting Type | Surface Mount |
| Noise Figure | 5 dB |
| P1dB | 27.5 dBm |
| Package / Case | Die |
| RF Type | General Purpose |
| Supplier Device Package | Die |
| Voltage - Supply | 12 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
Description
General part information
HMC619 Series
The HMC619 devices are GaAs, monolithic microwave integrated circuit (MMIC), and PHEMT distributed power amplifier die which operate between dc and 10 GHz. These amplifiers provide 11 dB or 12.8 dB of gain, ±37 dBm output IP3, and 27 dBm or 28 dBm of output power at 1 dB gain compression, while requiring 300 mA from a +12 V supply. Gain flatness is excellent at ±0.4 dB or ±0.5 dB from dc to 10GHz, making the HMC619 devices ideal for EW, ECM, radar, and test equipment applications. The HMC619 devices inputs/outputs are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All chip data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal 0.31 mm (12 mils) length.ApplicationsTelecom infrastructureMicrowave radio and VSATMilitary and spaceTest instrumentationFiber optics
Documents
Technical documentation and resources