IPT007N06NATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; TOLL HSOF-8 PACKAGE; 0.75 MOHM;
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IPT007N06NATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; TOLL HSOF-8 PACKAGE; 0.75 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPT007N06NATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 300 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 6 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 287 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 16000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerSFN |
| Power Dissipation (Max) | 375 W |
| Rds On (Max) @ Id, Vgs | 0.75 mOhm |
| Supplier Device Package | PG-HSOF-8-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPT007 Series
Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.
Documents
Technical documentation and resources