Discrete Semiconductor Products

SIJ462DP-T1-GE3

Obsolete

MOSFET N-CH 60V 46.5A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 46.5A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIJ462DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	46.5 A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Max)	32 nC
Input Capacitance (Ciss) (Max)	1400 pF
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Rds On (Max)	8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

Part	Technology	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Package Name	Mounting Type
Vishay Dale SIJ462DP-T1-GE3	MOSFET (Metal Oxide)	46.5 A	8 mOhm	PowerPAK® SO-8	60 V	N-Channel	32 nC	2.5 V	1400 pF	PowerPAK® SO-8	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.57	1m+

3D models and CAD resources for this part

General part information

N-Channel 60 V 46.5A(Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources