
Discrete Semiconductor Products
MBRH200150R
ActiveGeneSiC Semiconductor
DIODE MODULES 150V 200A REVERSE
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Discrete Semiconductor Products
MBRH200150R
ActiveGeneSiC Semiconductor
DIODE MODULES 150V 200A REVERSE
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | MBRH200150R |
|---|---|
| Current - Average Rectified (Io) | 200 A |
| Current - Reverse Leakage @ Vr | 1 mA |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | D-67 |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | D-67 |
| Technology | Reverse Polarity, Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 920 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
MBRH200150 Series
Diode 200 V 200A Chassis Mount D-67
Documents
Technical documentation and resources