Discrete Semiconductor Products

PJQ5848-AU_R2_000A1

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40V DUAL N-CHANNEL ENHANCEMENT M

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Discrete Semiconductor Products

Active

40V DUAL N-CHANNEL ENHANCEMENT M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5848-AU_R2_000A1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	30 A, 8.6 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	10 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1040 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max [Max]	2 W, 23.8 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	DFN5060B-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Grade	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Configuration	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Qualification	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
Panjit International Inc. PJQ5848-AU_R2_000A1	DFN5060B-8	8.6 A 30 A	2.5 V	MOSFET (Metal Oxide)	Automotive	175 °C	-55 °C	2 W 23.8 W	2 N-Channel (Dual)	40 V	12 mOhm	10 nC	AEC-Q101	8-PowerTDFN	Surface Mount	1040 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 40V 8.6A (Ta), 30A (Tc) 2W (Ta), 23.8W (Tc) Surface Mount DFN5060B-8

Technical documentation and resources