Specification	CSD18510KTT

Current - Continuous Drain (Id) @ 25°C	274 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	153 nC
Input Capacitance (Ciss) (Max) @ Vds	11400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	250 W
Rds On (Max) @ Id, Vgs	1.7 mOhm
Supplier Device Package	TO-263 (DDPAK-3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

CSD18510KTT Series

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.96 mOhm

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]
Texas Instruments CSD18510KTT	1.7 mOhm	153 nC	11400 pF	N-Channel	TO-263 (DDPAK-3)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	250 W	2.3 V	Surface Mount	40 V	MOSFET (Metal Oxide)	4.5 V 10 V	274 A	20 V
Texas Instruments CSD18510Q5BT		153 nC	11400 pF	N-Channel	8-VSON-CLIP (5x6)	8-PowerTDFN	-55 °C	150 °C	156 W	2.3 V	Surface Mount	40 V	MOSFET (Metal Oxide)	4.5 V 10 V	300 A	20 V	0.96 mOhm
Texas Instruments CSD18510KCS	1.7 mOhm	75 nC	11400 pF	N-Channel	TO-220-3	TO-220-3	-55 °C	175 ░C	250 W	2.3 V	Through Hole	40 V	MOSFET (Metal Oxide)	4.5 V 10 V	200 A	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 40-V, 0.79-mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Technical documentation and resources