Discrete Semiconductor Products

KSB596Y

Obsolete

TRANS PNP 80V 4A TO220-3

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Discrete Semiconductor Products

Obsolete

TRANS PNP 80V 4A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSB596Y

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	70 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	3 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	30 W
Supplier Device Package	TO-220-3
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Transistor Type	Power - Max [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Frequency - Transition	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor KSB596Y	PNP	30 W	TO-220-3	4 A	150 °C	3 MHz	TO-220-3	120	70 µA	Through Hole	80 V
ON Semiconductor KSB596O	PNP	30 W	TO-220-3	4 A	150 °C	3 MHz	TO-220-3	70 hFE	70 µA	Through Hole	80 V
ON Semiconductor KSB596OTU	PNP	30 W	TO-220-3	4 A	150 °C	3 MHz	TO-220-3	70 hFE	70 µA	Through Hole	80 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 80 V 4 A 3MHz 30 W Through Hole TO-220-3

Technical documentation and resources