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IPL60R385CP
Discrete Semiconductor Products

IPL60R299CPAUMA1

LTB
INFINEON

MOSFET N-CH 600V 11.1A 4VSON

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IPL60R385CP
Discrete Semiconductor Products

IPL60R299CPAUMA1

LTB
INFINEON

MOSFET N-CH 600V 11.1A 4VSON

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPL60R299CPAUMA1
Current - Continuous Drain (Id) @ 25°C11.1 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]22 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1100 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / Case4-PowerTSFN
Power Dissipation (Max)96 W
Rds On (Max) @ Id, Vgs299 mOhm
Supplier Device PackagePG-VSON-4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.98
Digi-Reel® 1$ 3.98
N/A 0$ 1.39
91329$ 1.39
Tape & Reel (TR) 3000$ 1.39

Description

General part information

IPL60R299 Series

N-Channel 600 V 11.1A (Tc) 96W (Tc) Surface Mount PG-VSON-4

Documents

Technical documentation and resources