Technical Specifications
Parameters and characteristics for this part
| Specification | SPP20N60CFDXKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20.7 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 124 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 208 W |
| Rds On (Max) @ Id, Vgs | 220 mOhm |
| Supplier Device Package | PG-TO220-3-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.87 | |
| Tube | 500 | $ 1.95 | ||
Description
General part information
SPP20N60 Series
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. Replacement for CoolMOS™ CFD is600V CoolMOS™ CFD7Characteristics and applications of CoolMOS™ CFD2Improved cost performance, light load efficiency and ease-of-use in EMI and low voltage overshoot. Soft switching resonant topologies with hard commutation requirements requiring a fast body diode.
Documents
Technical documentation and resources