
Discrete Semiconductor Products
BSO130P03SHXUMA1
ObsoleteINFINEON
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 30 V ; SO-8 PACKAGE; 11 MOHM;
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DocumentsTechnical Data Sheet EN

Discrete Semiconductor Products
BSO130P03SHXUMA1
ObsoleteINFINEON
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 30 V ; SO-8 PACKAGE; 11 MOHM;
Deep-Dive with AI
DocumentsTechnical Data Sheet EN
Technical Specifications
Parameters and characteristics for this part
| Specification | BSO130P03SHXUMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9.2 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3520 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Power Dissipation (Max) | 1.56 W |
| Rds On (Max) @ Id, Vgs | 13 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSO130 Series
These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Documents
Technical documentation and resources