Discrete Semiconductor Products

IPU105N03L G

Obsolete

MOSFET N-CH 30V 35A TO251-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 35A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPU105N03L G

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	38 W
Rds On (Max) @ Id, Vgs	10.5 mOhm
Supplier Device Package	PG-TO251-3-21
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	FET Type	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C
INFINEON IPU105N03L G	175 °C	-55 °C	4.5 V 10 V	Through Hole	10.5 mOhm	30 V	14 nC	38 W	2.2 V	20 V	1500 pF	IPAK TO-251-3 Short Leads TO-251AA	N-Channel	PG-TO251-3-21	MOSFET (Metal Oxide)	35 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.28

General part information

N-Channel 30 V 35A (Tc) 38W (Tc) Through Hole PG-TO251-3-21

Technical documentation and resources