Discrete Semiconductor Products

IXTA180N10T

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, N CHANNEL, 100 V, 180 A, 0.0057 OHM, TO-263 (D2PAK), SURFACE MOUNT

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DocumentsDatasheet Product Change Notice EN

Discrete Semiconductor Products

IXTA180N10T

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, N CHANNEL, 100 V, 180 A, 0.0057 OHM, TO-263 (D2PAK), SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA180N10T

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	151 nC
Input Capacitance (Ciss) (Max) @ Vds	6900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	480 W
Rds On (Max) @ Id, Vgs [Max]	6.4 mOhm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

IXTA180N10T7 Series

DiscMSFT NChTrenchGate-Gen1 TO-263D2

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type
Littelfuse/Commercial Vehicle Products IXTA180N10T	480 W	4.5 V	100 V	6900 pF	30 V	Surface Mount	-55 °C	175 ░C	151 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	6.4 mOhm	180 A	TO-263AA	10 V	MOSFET (Metal Oxide)	N-Channel
Littelfuse/Commercial Vehicle Products IXTA180N10T7	480 W	4.5 V	100 V	6900 pF	30 V	Surface Mount	-55 °C	175 ░C	151 nC	D2PAK TO-263-7	6.4 mOhm	180 A	TO-263-7 (IXTA)	10 V	MOSFET (Metal Oxide)	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.90
		50	$ 4.67
		100	$ 4.01
		500	$ 3.56
		1000	$ 3.05
		2000	$ 2.87
Newark	Each	1	$ 5.92
		10	$ 5.13
		25	$ 4.34
		50	$ 3.55
		100	$ 3.25
		500	$ 2.76
		1000	$ 2.70

Description

General part information

IXTA180N10T7 Series

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density