Discrete Semiconductor Products

S4KW12C-6D

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DIODE GEN PURP 12KV 6A MODULE

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Discrete Semiconductor Products

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DIODE GEN PURP 12KV 6A MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	S4KW12C-6D

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	4 µA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Module
Reverse Recovery Time (trr)	2 µs
Speed [Min]	200 mA, 500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	12000 V
Voltage - Forward (Vf) (Max) @ If [Max]	12 V

Part	Voltage - DC Reverse (Vr) (Max)	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Reverse Recovery Time (trr)	Speed [Min]	Mounting Type	Current - Reverse Leakage @ Vr	Technology	Current - Average Rectified (Io)	Package / Case	Voltage - Forward (Vf) (Max) @ If
Semtech Corporation S4KW12C-6D	12000 V	12 V	-55 °C	150 °C	2 µs	200 mA 500 ns	Chassis Mount	4 µA	Standard	6 A	Module
Semtech Corporation S4KW12C-6N	12000 V	12 V	-55 °C	150 °C	2 µs	200 mA 500 ns	Chassis Mount	4 µA	Standard	12 A	Module	12 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 12000 V 6A Chassis Mount

Technical documentation and resources