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PBHV8140Z-QX
Discrete Semiconductor Products

PBHV8140Z-QX

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Nexperia USA Inc.

500 V, 1 A NPN HIGH-VOLTAGE LOW VCESAT TRANSISTOR

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PBHV8140Z-QX
Discrete Semiconductor Products

PBHV8140Z-QX

Active
Nexperia USA Inc.

500 V, 1 A NPN HIGH-VOLTAGE LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBHV8140Z-QX
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100 hFE
Frequency - Transition25 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-261AA, TO-261-4
Power - Max [Max]730 mW
QualificationAEC-Q101
Supplier Device PackageSOT-223
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]400 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.30

Description

General part information

PBHV8140Z-Q Series

NPN high-voltage low VCEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.