Discrete Semiconductor Products

1N4004-G

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DIODE GEN PURP 400V 1A DO41

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Discrete Semiconductor Products

Active

DIODE GEN PURP 400V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	1N4004-G

Capacitance	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	150 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	Axial, DO-204AL, DO-41
Package Name	DO-41
Speed	Standard Recovery
Speed - Fast Recovery (Minimum)	200 mA, 500 ns
Speed - Recovery Current	200 mA, 200 mA
Speed - Recovery Time	500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	400 V
Voltage - Forward (Vf) (Max)	1.1 V

Part	Voltage - Forward (Vf) (Max)	Package / Case	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time	Mounting Type	Technology	Capacitance	Package Name	Current - Average Rectified (Io)	Current - Reverse Leakage	Voltage - DC Reverse (Vr) (Max)
Comchip Technology 1N4004-G	1.1 V	Axial DO-204AL DO-41	150 °C	-55 °C	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	Through Hole	Standard	15 pF	DO-41	1 A	5 µA	400 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Cut Tape (CT)	1	$ 0.15	1m+
		10	$ 0.10
		100	$ 0.05
		500	$ 0.04
		1000	$ 0.03
		2000	$ 0.02
	N/A	497763	$ 0.10	1m+
	Tape & Box (TB)	5000	$ 0.02	1m+
		10000	$ 0.02

3D models and CAD resources for this part

General part information

Diode 400 V 1A Through Hole DO-41

Technical documentation and resources

No documents available