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PBHV8540T-QR
Discrete Semiconductor Products

PBHV8540T-QR

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Nexperia USA Inc.

500 V, 0.5 A NPN HIGH-VOLTAGE LOW VCESAT TRANSISTOR

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PBHV8540T-QR
Discrete Semiconductor Products

PBHV8540T-QR

Active
Nexperia USA Inc.

500 V, 0.5 A NPN HIGH-VOLTAGE LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBHV8540T-QR
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100 hFE
Frequency - Transition30 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
QualificationAEC-Q101
Supplier Device PackageTO-236AB
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]400 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.76

Description

General part information

PBHV8540T-Q Series

NPN high-voltage low VCEsattransistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.