Discrete Semiconductor Products

2SA1943-O(Q)

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BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 230 V, 15 A, 150 W, TO-3PL, THROUGH HOLE

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Discrete Semiconductor Products

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 230 V, 15 A, 150 W, TO-3PL, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1943-O(Q)

Current - Collector (Ic) (Max) [Max]	15 A
Current - Collector Cutoff (Max) [Max]	5 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3PL
Power - Max [Max]	150 W
Supplier Device Package	TO-3P(L)
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	230 V

Bipolar Transistors, PNP Bipolar Transistor, -230 V, -15 A, TO-3P(L)

Part	Mounting Type	Operating Temperature	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Package / Case
Toshiba Semiconductor and Storage 2SA1943-O(S1,F	Through Hole	150 °C	30 MHz	15 A	PNP	5 µA	TO-3P(L)	230 V	3 V	80	150 W	TO-3PL
Toshiba Semiconductor and Storage 2SA1943-O(Q)	Through Hole	150 °C	30 MHz	15 A	PNP	5 µA	TO-3P(L)	230 V	3 V	80	150 W	TO-3PL

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, PNP Bipolar Transistor, -230 V, -15 A, TO-3P(L)

Technical documentation and resources