Specification	SSM6K513NU,LF

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1130 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	1.25 W
Rds On (Max) @ Id, Vgs	8.9 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

SSM6K513 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 15 A, 0.0089 Ω@10V, SOT-1220(UDFN6B)

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type
Toshiba Semiconductor and Storage SSM6K513NU,LF	MOSFET (Metal Oxide)	15 A	150 °C	1.25 W	2.1 V	8.9 mOhm	N-Channel	6-UDFNB (2x2)	20 V	1130 pF	4.5 V 10 V	7.5 nC	30 V	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 15 A, 0.0089 Ω@10V, SOT-1220(UDFN6B)

Technical documentation and resources