Technical Specifications
Parameters and characteristics for this part
| Specification | CBR10P65HL |
|---|---|
| Current - Average Rectified (Io) | 30 A |
| Current - Reverse Leakage | 25 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | 4-PowerTSFN |
| Package Length | 8 mm |
| Package Name | 4-DFN |
| Package Width | 8 mm |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Strip | 1 | $ 3.77 | <4d |
| 10 | $ 2.46 | |||
| 100 | $ 1.71 | |||
| 500 | $ 1.40 | |||
| 1000 | $ 1.29 | |||
| 2000 | $ 1.21 | |||
| 5000 | $ 1.13 | |||
CAD
3D models and CAD resources for this part
Description
General part information
CBR10P65HL
DIODE SIL CARBIDE 650V 30A 4DFN
Documents
Technical documentation and resources