IRF7501TRPBF
ObsoleteIR MOSFET™ N+N DUAL POWER MOSFET ; MICRO8 MO-187 PACKAGE; 135 MOHM;
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IRF7501TRPBF
ObsoleteIR MOSFET™ N+N DUAL POWER MOSFET ; MICRO8 MO-187 PACKAGE; 135 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRF7501TRPBF |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 2.4 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-TSSOP, 8-MSOP |
| Package / Case | 0.118 in, 3 mm Width |
| Power - Max [Max] | 1.25 W |
| Rds On (Max) @ Id, Vgs | 135 mOhm |
| Supplier Device Package | Micro8™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 700 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
Description
General part information
IRF7501 Series
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Documents
Technical documentation and resources