Discrete Semiconductor Products

IRL40S212ARMA1

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STRONGIRFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 1.9 MOHM;

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Discrete Semiconductor Products

Active

STRONGIRFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 1.9 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRL40S212ARMA1

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	137 nC
Input Capacitance (Ciss) (Max) @ Vds	8320 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	231 W
Rds On (Max) @ Id, Vgs	1.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
INFINEON IRL40S212ARMA1	195 A	4.5 V 10 V	231 W	N-Channel	20 V	MOSFET (Metal Oxide)	137 nC	Surface Mount	175 °C	-55 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	40 V	8320 pF	2.4 V	1.9 mOhm

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General part information

N-Channel 40 V 195A (Tc) 231W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources