BUK7M45-40EX

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MOSFET N-CH 40V 19A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 40V 19A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7M45-40EX

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	317 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	31 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Grade	Qualification	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)
Freescale Semiconductor - NXP BUK7M45-40EX	19 A	Surface Mount	Automotive	AEC-Q101	317 pF	N-Channel	-55 °C	175 ░C	20 V	6.2 nC	31 W	10 V	45 mOhm	MOSFET (Metal Oxide)	LFPAK33	40 V

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General part information

N-Channel 40 V 19A (Tc) 31W (Tc) Surface Mount LFPAK33

Technical documentation and resources