Discrete Semiconductor Products

HN1B01FU-GR,LXHF

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BIPOLAR TRANSISTORS, PNP + NPN BIPOLAR TRANSISTOR, -50 V/50 V, -0.15 A/0.15 A, SOT-363(US6)

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS, PNP + NPN BIPOLAR TRANSISTOR, -50 V/50 V, -0.15 A/0.15 A, SOT-363(US6)

Technical Specifications

Parameters and characteristics for this part

Specification	HN1B01FU-GR,LXHF

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Frequency - Transition	120 MHz, 150 MHz
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	200 mW
Qualification	AEC-Q101
Supplier Device Package	US6
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	250 mV, 300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Bipolar Transistors, PNP + NPN Bipolar Transistor, -50 V/50 V, -0.15 A/0.15 A, SOT-363(US6)

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Power - Max [Max]	Grade	Supplier Device Package	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Qualification	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Operating Temperature
Toshiba Semiconductor and Storage HN1B01FU-Y,LXHF	120	120 MHz 150 MHz	200 mW	Automotive	US6	1 NPN 1 PNP	50 V	6-TSSOP SC-88 SOT-363	Surface Mount	250 mV 300 mV	100 nA	150 mA	AEC-Q101
Toshiba Semiconductor and Storage HN1B01FU-GR,LF		150 MHz			US6	1 NPN 1 PNP	50 V	6-TSSOP SC-88 SOT-363	Surface Mount	250 mV	100 nA	150 mA		200 mW 210 mW	200 hFE	125 ¯C
Toshiba Semiconductor and Storage HN1B01FU-GR,LXHF		120 MHz 150 MHz	200 mW	Automotive	US6	1 NPN 1 PNP	50 V	6-TSSOP SC-88 SOT-363	Surface Mount	250 mV 300 mV	100 nA	150 mA	AEC-Q101		200 hFE