Specification	BUK9Y104-100B,115

Current - Continuous Drain (Id) @ 25°C	14.8 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1139 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	59 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	99 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2.15 V

BUK9Y104-100B Series

N-channel TrenchMOS logic level FET

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Qualification	Technology	Grade	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type
Nexperia USA Inc. BUK9Y104-100B,115	2.15 V	99 mOhm	LFPAK56 Power-SO8	59 W	15 V	100 V	AEC-Q101	MOSFET (Metal Oxide)	Automotive	1139 pF	175 °C	-55 °C	11 nC	N-Channel	5 V 10 V	SC-100 SOT-669	14.8 A	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.36

Description

General part information

BUK9Y104-100B Series

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.