Discrete Semiconductor Products

2N3706 TIN/LEAD

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BIPOLAR TRANSISTORS - BJT NPN 20V 800MA HFE/800

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT NPN 20V 800MA HFE/800

Technical Specifications

Parameters and characteristics for this part

Specification	2N3706 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	20 V

Part	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Package / Case	Current - Collector (Ic) (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition
Central Semiconductor Corp 2N3706 TIN/LEAD	625 mW	100 nA	20 V	Through Hole	150 °C	-65 °C	TO-92-3	30	TO-226AA	TO-226-3 TO-92-3	800 mA	NPN	1 V	100 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.41
Mouser	N/A	2500	$ 0.37

General part information

BIPOLAR TRANSISTORS - BJT NPN 20V 800MA HFE/800

Technical documentation and resources

No documents available