NSF080120L4A0Q
ActiveSIC MOSFETS ULTRA LOW CAPACITANCE ESD PROTECTION ARRAY
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NSF080120L4A0Q
ActiveSIC MOSFETS ULTRA LOW CAPACITANCE ESD PROTECTION ARRAY
Technical Specifications
Parameters and characteristics for this part
| Specification | NSF080120L4A0Q |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 35 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V, 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 52 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1335 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 183 W |
| Rds On (Max) @ Id, Vgs | 120 mOhm |
| Supplier Device Package | TO-247 |
| Vgs (Max) [Max] | 22 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 2.9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
NSF080120L4A0 Series
The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSontemperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
Documents
Technical documentation and resources