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IPAN70R750P7SXKSA1

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TRANS MOSFET N-CH 700V 6.5A 3-PIN(3+TAB) TO-220FP TUBE

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Discrete Semiconductor Products

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TRANS MOSFET N-CH 700V 6.5A 3-PIN(3+TAB) TO-220FP TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IPAN70R750P7SXKSA1

Current - Continuous Drain (Id) @ 25°C	6.5 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	306 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	20.8 W
Rds On (Max) @ Id, Vgs	750 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3.5 V

Part	Technology	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
INFINEON IPAN70R360P7SXKSA1	MOSFET (Metal Oxide)	TO-220-3 Full Pack	700 V	12.5 A	Through Hole	10 V	16 V	-40 °C	150 °C	N-Channel	PG-TO220-FP	517 pF	3.5 V	26.5 W	360 mOhm	16.4 nC
INFINEON IPAN70R900P7SXKSA1	MOSFET (Metal Oxide)	TO-220-3 Full Pack	700 V	6 A	Through Hole	10 V	16 V	-40 °C	150 °C	N-Channel	PG-TO220-FP	211 pF	3.5 V	17.9 W	900 mOhm	6.8 nC
INFINEON IPAN70R750P7SXKSA1	MOSFET (Metal Oxide)	TO-220-3 Full Pack	700 V	6.5 A	Through Hole	10 V	16 V	-40 °C	150 °C	N-Channel	PG-TO220-FP	306 pF	3.5 V		750 mOhm	8.3 nC	20.8 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 700 V 6.5A (Tc) 20.8W (Tc) Through Hole PG-TO220-FP

Technical documentation and resources