FDC6301N_G

Obsolete

MOSFET 2N-CH 25V 0.22A SSOT6

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 25V 0.22A SSOT6

Technical Specifications

Parameters and characteristics for this part

Specification	FDC6301N_G

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	220 mA
Drain to Source Voltage (Vdss)	25 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	0.7 nC
Input Capacitance (Ciss) (Max) @ Vds	9.5 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	700 mW
Rds On (Max) @ Id, Vgs	4 Ohm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Mounting Type	Technology	Configuration	FET Feature	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs
ON Semiconductor FDC6301N_G	25 V	1.5 V	-55 °C	150 °C	220 mA	0.7 nC	700 mW	Surface Mount	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	SOT-23-6 Thin TSOT-23-6	9.5 pF	SuperSOT™-6	4 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 25V 220mA 700mW Surface Mount SuperSOT™-6

Technical documentation and resources

No documents available