Discrete Semiconductor Products
PBSS8110T,215
ActiveNexperia USA Inc.
100 V, 1 A NPN LOW VCESAT TRANSISTOR
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Discrete Semiconductor Products
PBSS8110T,215
ActiveNexperia USA Inc.
100 V, 1 A NPN LOW VCESAT TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS8110T,215 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 150 hFE |
| Frequency - Transition | 100 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 480 mW |
| Supplier Device Package | TO-236AB |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 200 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 36727 | $ 0.60 | |
Description
General part information
PBSS8110T Series
NPN low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources