Discrete Semiconductor Products

IPB039N10N3GE8187ATMA1

Obsolete

TRANS MOSFET N-CH 100V 160A 7-PIN(6+TAB) D2PAK

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Discrete Semiconductor Products

Obsolete

TRANS MOSFET N-CH 100V 160A 7-PIN(6+TAB) D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IPB039N10N3GE8187ATMA1

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	117 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8410 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK (6 Leads + Tab)
Power Dissipation (Max) [Max]	214 W
Rds On (Max) @ Id, Vgs	3.9 mOhm
Supplier Device Package	PG-TO263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Drain to Source Voltage (Vdss)	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id
INFINEON IPB039N10N3GE8187ATMA1	100 V	N-Channel	MOSFET (Metal Oxide)	8410 pF	175 °C	-55 °C	Surface Mount	6 V 10 V	3.9 mOhm	117 nC	D2PAK (6 Leads + Tab) TO-263-7	160 A	20 V	PG-TO263-7	214 W	3.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.72

General part information

N-Channel 100 V 160A (Tc) 214W (Tc) Surface Mount PG-TO263-7

Technical documentation and resources