Discrete Semiconductor Products

IPB097N08N3 G

Obsolete

MOSFET N-CH 80V 70A D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 80V 70A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IPB097N08N3 G

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	2410 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	100 W
Rds On (Max) @ Id, Vgs	9.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	3.5 V

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case
INFINEON IPB097N08N3 G	9.7 mOhm	35 nC	3.5 V	100 W	2410 pF	175 °C	-55 °C	70 A	MOSFET (Metal Oxide)	20 V	80 V	Surface Mount	N-Channel	6 V 10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 80 V 70A (Tc) 100W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources