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BAS16-QR
Discrete Semiconductor Products

BAS16-QR

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Nexperia USA Inc.

DIODE STD 100V 215MA TO236AB

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BAS16-QR
Discrete Semiconductor Products

BAS16-QR

Active
Nexperia USA Inc.

DIODE STD 100V 215MA TO236AB

Technical Specifications

Parameters and characteristics for this part

SpecificationBAS16-QR
Capacitance @ Vr, F1.5 pF
Current - Average Rectified (Io)215 mA
Current - Reverse Leakage @ Vr500 nA
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction150 ¯C
Package / CaseSOT-23-3, TO-236-3, SC-59
QualificationAEC-Q101
Reverse Recovery Time (trr)4 ns
Speed500 ns, 200 mA
Supplier Device PackageTO-236AB
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 8$ 0.14

Description

General part information

BAS16-Q Series

High-speed switching diode, encapsulated in small SOT23 Surface-Mounted Device (SMD) plastic package.