Discrete Semiconductor Products

VS-40APS16-M3

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DIODE GEN PURP 1.6KV 40A TO247AC

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Discrete Semiconductor Products

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DIODE GEN PURP 1.6KV 40A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-40APS16-M3

Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-3
Speed [Min]	200 mA, 500 ns
Supplier Device Package	TO-247AC
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.14 V

Part	Mounting Type	Current - Average Rectified (Io)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Supplier Device Package	Package / Case	Speed [Min]	Technology	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division VS-40APS16-M3	Through Hole	40 A	-40 °C	150 °C	100 µA	TO-247AC	TO-247-3	200 mA 500 ns	Standard	1.14 V
Vishay General Semiconductor - Diodes Division VS-40APS16PBF	Through Hole	40 A	-40 °C	150 °C	100 µA	TO-247AC	TO-247-3	200 mA 500 ns	Standard	1.14 V

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General part information

Diode 1600 V 40A Through Hole TO-247AC

Technical documentation and resources