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2SC1621(0)-T1B-A
Discrete Semiconductor Products

2SC1621(0)-T1B-A

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Renesas Electronics Corporation

BIPOLAR POWER TRANSISTORS

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2SC1621(0)-T1B-A
Discrete Semiconductor Products

2SC1621(0)-T1B-A

Active
Renesas Electronics Corporation

BIPOLAR POWER TRANSISTORS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2SC1621(0)-T1B-A
Current - Collector (Ic) (Max) [Max]200 mA
Current - Collector Cutoff (Max) [Max]100 nA
Frequency - Transition500 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-323, SC-70
Power - Max [Max]200 mW
Supplier Device PackageSC-70
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 31000$ 0.27

Description

General part information

2SC1621 Series

A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.

Documents

Technical documentation and resources