Specification	SSM6J422TU,LXHF

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	12.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	840 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max)	1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	42.7 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	6 V, -8 V
Vgs(th) (Max) @ Id	1 V

SSM6J422TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -4.0 A, 0.0427 Ω@4.5V, SOT-363F(UF6)

Part	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Operating Temperature	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Grade
Toshiba Semiconductor and Storage SSM6J422TU,LF	-8 V 6 V	20 V	1 W	1 V	12.8 nC	Surface Mount	MOSFET (Metal Oxide)	150 °C	UF6	840 pF	P-Channel	6-SMD Flat Leads	4 A	42.7 mOhm	1.5 V 4.5 V
Toshiba Semiconductor and Storage SSM6J422TU,LXHF	-8 V 6 V	20 V	1 W	1 V	12.8 nC	Surface Mount	MOSFET (Metal Oxide)	150 °C	UF6	840 pF	P-Channel	6-SMD Flat Leads	4 A	42.7 mOhm	1.5 V 4.5 V	AEC-Q101	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -4.0 A, 0.0427 Ω@4.5V, SOT-363F(UF6)

Technical documentation and resources