Discrete Semiconductor Products

SPB42N03S2L-13 G

Obsolete

MOSFET N-CH 30V 42A TO263-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 42A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPB42N03S2L-13 G

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1130 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	12.6 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Power Dissipation (Max)	Technology	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON SPB42N03S2L-13 G	30.5 nC	42 A	12.6 mOhm	2 V	N-Channel	Surface Mount	83 W	MOSFET (Metal Oxide)	PG-TO263-3-2	175 °C	-55 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 V	4.5 V 10 V	20 V	1130 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.48

General part information

N-Channel 30 V 42A (Tc) 83W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources