Discrete Semiconductor Products

IDH09SG60CXKSA2

Obsolete

DIODE SIL CARB 600V 9A TO220-2-1

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Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 600V 9A TO220-2-1

Technical Specifications

Parameters and characteristics for this part

Specification	IDH09SG60CXKSA2

Current - Average Rectified (Io)	9 A
Current - Reverse Leakage @ Vr	80 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	PG-TO220-2-1
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	2.1 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Current - Average Rectified (Io)	Package / Case	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Supplier Device Package	Mounting Type	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]
INFINEON IDH09SG60CXKSA2	175 ░C	-55 °C	500 mA	9 A	TO-220-2	80 µA	SiC (Silicon Carbide) Schottky	2.1 V	PG-TO220-2-1	Through Hole	0 ns	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 600 V 9A Through Hole PG-TO220-2-1

Technical documentation and resources

No documents available