Discrete Semiconductor Products

IPAN80R280P7XKSA1

LTB

MOSFET N-CH 800V 17A TO220

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Discrete Semiconductor Products

LTB

MOSFET N-CH 800V 17A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	IPAN80R280P7XKSA1

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	1200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	PG-TO220-3-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
INFINEON IPAN80R280P7XKSA1	10 V	PG-TO220-3-FP	20 V	800 V	1200 pF	280 mOhm	36 nC	TO-220-3 Full Pack	150 °C	-55 °C	17 A	3.5 V	Through Hole	N-Channel	MOSFET (Metal Oxide)
INFINEON IPAN80R450P7XKSA1	10 V	PG-TO220-3-FP	20 V	800 V	770 pF	450 mOhm		TO-220-3 Full Pack	150 °C	-55 °C	11 A	3.5 V	Through Hole	N-Channel	MOSFET (Metal Oxide)	24 nC	29 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 17A (Tc) 30W (Tc) Through Hole PG-TO220-3-FP

Technical documentation and resources