Discrete Semiconductor Products

SIA922EDJ-T4-GE3

Obsolete

MOSFET 2N-CH 30V 4.4A SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 4.4A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA922EDJ-T4-GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	4.4 A, 4.4 A
Current - Continuous Drain (Id) (Tc)	4.5 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	12 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-70-6 Dual
Package Name	PowerPAK® SC-70-6 Dual
Power - Max (Ta)	1.9 W
Power - Max (Tc)	7.8 W
Rds On (Max)	64 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1.4 V

Part	Vgs(th) (Max)	Package / Case	FET Feature	Power - Max	Drain to Source Voltage (Vdss)	Rds On (Max)	Channel Count	Configuration	Configuration - Features	Technology	Gate Charge (Max)	Current - Continuous Drain (Id)	Package Name	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Power - Max (Ta)	Power - Max (Tc)
Vishay Dale SIA922EDJ-T1-GE3	1.4 V	PowerPAK® SC-70-6 Dual	Logic Level Gate	7.8 W	30 V	64 mOhm	2	N-Channel	Dual	MOSFET (Metal Oxide)	12 nC	4.5 A	PowerPAK® SC-70-6 Dual	Surface Mount	-55 °C	150 °C
Vishay Dale SIA922EDJ-T4-GE3	1.4 V	PowerPAK® SC-70-6 Dual			30 V	64 mOhm	2	N-Channel	Dual	MOSFET (Metal Oxide)	12 nC		PowerPAK® SC-70-6 Dual	Surface Mount	-55 °C	150 °C	4.4 A 4.4 A	4.5 A	1.9 W	7.8 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

Mosfet Array 30V 4.4A (Ta), 4.5A (Tc) 1.9W (Ta), 7.8W (Tc) Surface Mount PowerPAK® SC-70-6 Dual

Technical documentation and resources