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PBSS4032NZ-QX
Discrete Semiconductor Products

PBSS4032NZ-QX

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Nexperia USA Inc.

30 V, 4.9 A NPN LOW VCESAT TRANSISTOR

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PBSS4032NZ-QX
Discrete Semiconductor Products

PBSS4032NZ-QX

Active
Nexperia USA Inc.

30 V, 4.9 A NPN LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4032NZ-QX
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]300
Frequency - Transition145 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-261AA, TO-261-4
Power - Max [Max]700 mW
QualificationAEC-Q101
Supplier Device PackageSOT-223
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic340 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.38

Description

General part information

PBSS4032NZ-Q Series

NPN low VCEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.