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SOT223
Discrete Semiconductor Products

PBSS304PZ-QF

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Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 80 V, 4.6 A NPN LOW VCESAT TRANSISTOR

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SOT223
Discrete Semiconductor Products

PBSS304PZ-QF

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 80 V, 4.6 A NPN LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS304PZ-QF
Current - Collector (Ic) (Max) [Max]4.5 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]200
Frequency - Transition130 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-261AA, TO-261-4
Power - Max [Max]700 mW
QualificationAEC-Q101
Supplier Device PackageSOT-223
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic375 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.31
MouserN/A 4000$ 0.23
24000$ 0.22

Description

General part information

PBSS304PZ-Q Series

PNP low VCEsattransistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.