Discrete Semiconductor Products

SIL08N02-TP

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N-CHANNEL MOSFET,SOT23-6L

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Discrete Semiconductor Products

Active

N-CHANNEL MOSFET,SOT23-6L

Technical Specifications

Parameters and characteristics for this part

Specification	SIL08N02-TP

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.2 nC
Input Capacitance (Ciss) (Max) @ Vds	900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max) [Max]	1.5 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	SOT-23-6L
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Supplier Device Package
MCC (Micro Commercial Components) SIL08N02-TP	8 A	1.8 V	4.5 V	SOT-23-6	MOSFET (Metal Oxide)	20 V	150 °C	-55 °C	900 pF	17 mOhm	Surface Mount	9.2 nC	1.5 W	1 V	10 V	N-Channel	SOT-23-6L
MCC (Micro Commercial Components) SIL08N02-TP	8 A	1.8 V	4.5 V	SOT-23-6	MOSFET (Metal Oxide)	20 V	150 °C	-55 °C	900 pF	17 mOhm	Surface Mount	9.2 nC	1.5 W	1 V	10 V	N-Channel	SOT-23-6L

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General part information

N-Channel 20 V 8A (Ta) 1.5W Surface Mount SOT-23-6L

Technical documentation and resources