Discrete Semiconductor Products

10A06GP-TP

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DIODE STANDARD 800V 10A R6

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Discrete Semiconductor Products

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DIODE STANDARD 800V 10A R6

Technical Specifications

Parameters and characteristics for this part

Specification	10A06GP-TP

Capacitance @ Vr, F	150 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	R-6, Axial
Speed [Min]	200 mA, 500 ns
Supplier Device Package	R-6
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Current - Average Rectified (Io)	Mounting Type	Technology	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Speed [Min]	Supplier Device Package	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If [Max]
MCC (Micro Commercial Components) 10A06GP-TP	10 A	Through Hole	Standard	R-6 Axial	800 V	1.2 V	150 pF	10 µA	200 mA 500 ns	R-6	-55 °C	150 °C
MCC (Micro Commercial Components) 10A06-TP	10 A	Through Hole	Standard	R-6 Axial	800 V	10 A	150 pF	10 µA	200 mA 500 ns	R-6	-55 °C	150 °C	1 V
MCC (Micro Commercial Components) 10A06-TP	10 A	Through Hole	Standard	R-6 Axial	800 V	10 A	150 pF	10 µA	200 mA 500 ns	R-6	-55 °C	150 °C	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 10A Through Hole R-6

Technical documentation and resources