Discrete Semiconductor Products

BST61,115

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TRANS PNP DARL 60V 1A SOT89

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Discrete Semiconductor Products

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TRANS PNP DARL 60V 1A SOT89

Technical Specifications

Parameters and characteristics for this part

Specification	BST61,115

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	2000
Frequency - Transition	200 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max	1.3 W
Qualification	AEC-Q101
Transistor Type	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic	1.3 V
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Package / Case	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Qualification	Current - Collector (Ic) (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Mounting Type	Power - Max	Grade
Freescale Semiconductor - NXP BST61,115	TO-243AA	1.3 V	200 MHz	2000	AEC-Q101	1 A	PNP - Darlington	60 V	150 °C	50 nA	Surface Mount	1.3 W	Automotive

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General part information

Bipolar (BJT) Transistor PNP - Darlington 60 V 1 A 200MHz 1.3 W Surface Mount SOT-89

Technical documentation and resources