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SOT669
Discrete Semiconductor Products

PSMN1R8-40YLC,115

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Nexperia USA Inc.

N-CHANNEL 40 V 1.8 MΩ LOGIC LEVEL MOSFET IN LFPAK USING NEXTPOWER TECHNOLOGY

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SOT669
Discrete Semiconductor Products

PSMN1R8-40YLC,115

Active
Nexperia USA Inc.

N-CHANNEL 40 V 1.8 MΩ LOGIC LEVEL MOSFET IN LFPAK USING NEXTPOWER TECHNOLOGY

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN1R8-40YLC,115
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs96 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]6680 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-100, SOT-669
Power Dissipation (Max)272 W
Rds On (Max) @ Id, Vgs1.8 mOhm
Supplier Device PackagePower-SO8, LFPAK56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 9449$ 3.28

Description

General part information

PSMN1R8-40YLC Series

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.