Discrete Semiconductor Products

SUP75P05-08-E3

Obsolete

MOSFET P-CH 55V 75A TO220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 55V 75A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP75P05-08-E3

Current - Continuous Drain (Id) (Tc)	75 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	225 nC
Input Capacitance (Ciss) (Max)	8500 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	3.7 W, 250 W
Rds On (Max)	8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

Part	Vgs (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	FET Type	Package Name	Package / Case	Drain to Source Voltage (Vdss)
Vishay Dale SUP75P03-07-E3	20 V	MOSFET (Metal Oxide)	-55 °C	175 °C	3 V	10 V	4.5 V	7 mOhm	3.75 W 187 W	Through Hole	75 A	9000 pF	240 nC	P-Channel	TO-220AB	TO-220-3	30 V
Vishay Dale SUP75P05-08-E3	20 V	MOSFET (Metal Oxide)	-55 °C	175 °C	3 V	10 V	4.5 V	8 mOhm	3.7 W 250 W	Through Hole	75 A	8500 pF	225 nC	P-Channel	TO-220AB	TO-220-3	55 V
Vishay Dale SUP75N03-04-E3	20 V	MOSFET (Metal Oxide)	-55 °C	175 °C	3 V	10 V	4.5 V	4 mOhm	3.7 W 187 W	Through Hole	75 A	10742 pF	250 nC	N-Channel	TO-220AB	TO-220-3	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

P-Channel 55 V 75A (Tc) 3.7W (Ta), 250W (Tc) Through Hole TO-220AB

Technical documentation and resources