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MBR10H100-E3/45
Discrete Semiconductor Products

GUR5H60HE3/45

Obsolete

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MBR10H100-E3/45
Discrete Semiconductor Products

GUR5H60HE3/45

Obsolete

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationGUR5H60HE3/45
Current - Average Rectified (Io)5 A
Current - Reverse Leakage @ Vr20 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseTO-220-2
Reverse Recovery Time (trr)30 ns
Speed500 ns, 200 mA
Supplier Device PackageTO-220AC
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If5 A, 1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

GUR5H Series

Diode 600 V 5A Through Hole TO-220AC

Documents

Technical documentation and resources