Discrete Semiconductor Products

AOT10B65M1

NRND

IGBT 650V 20A TO-220

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Discrete Semiconductor Products

NRND

IGBT 650V 20A TO-220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT10B65M1

Current - Collector (Ic) (Max) [Max]	20 A
Current - Collector Pulsed (Icm)	30 A
Gate Charge	24 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	150 W
Reverse Recovery Time (trr)	262 ns
Supplier Device Package	TO-220
Switching Energy	130 µJ, 180 µJ
Td (on/off) @ 25°C	91 ns, 12 ns
Test Condition	400 V, 15 V, 30 Ohm, 10 A
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Power - Max [Max]	Switching Energy	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Reverse Recovery Time (trr)	Package / Case	Test Condition	Vce(on) (Max) @ Vge, Ic	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)
Alpha & Omega Semiconductor Inc. AOT10B65M1	150 W	130 µJ 180 µJ	TO-220	20 A	30 A	12 ns 91 ns	24 nC	650 V	Through Hole	175 °C	-55 °C	262 ns	TO-220-3	10 A 15 V 30 Ohm 400 V	2 V
Alpha & Omega Semiconductor Inc. AOT10N60			TO-220						Through Hole	150 °C	-55 °C		TO-220-3			750 mOhm	10 A	4.5 V	250 W	1600 pF	30 V	40 nC	N-Channel	10 V	MOSFET (Metal Oxide)	600 V

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