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NJG1812ME4-TE1
RF and Wireless

NJG1812ME4-TE1

Active
Nisshinbo Micro Devices Inc.

RF SWITCH ICS HP DPDT SWITCH GAAS 1.8V UP TO 3GHZ

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NJG1812ME4-TE1
RF and Wireless

NJG1812ME4-TE1

Active
Nisshinbo Micro Devices Inc.

RF SWITCH ICS HP DPDT SWITCH GAAS 1.8V UP TO 3GHZ

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationNJG1812ME4-TE1
CircuitDPDT
FeaturesDC Blocked
Frequency Range3 GHz
Impedance50 Ohms
Insertion Loss0.45 dB
Isolation17 dB
Operating Temperature [Max]105 ░C
Operating Temperature [Min]-40 C
Package / Case12-XFQFN Exposed Pad
RF TypeLTE, UMTS, CDMA, GSM
Supplier Device Package12-EQFN (2x2)
Test Frequency2.7 GHz
Voltage - Supply [Max]5 V
Voltage - Supply [Min]2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.94
Tape & Reel (TR) 3000$ 0.93
6000$ 0.89
MouserN/A 1$ 2.95
10$ 1.92
25$ 1.74
100$ 1.47
250$ 1.38
500$ 1.21
1000$ 1.03
3000$ 0.90
6000$ 0.88

Description

General part information

NJG1812 Series

RF Switch IC CDMA, GSM, LTE, UMTS DPDT 50Ohm 12-EQFN (2x2)

Documents

Technical documentation and resources